| PART |
Description |
Maker |
| MJD31CQ MJD31CQ-13 MJD31CQ-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252
|
Diodes Incorporated
|
| BUD42D-D BUD42D-1 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| BFP420 Q62702-F1591 |
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A- |
Low-frequency high-gain amplification silicon Tr.
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
| BUL42D BUL42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR
|
ONSEMI[ON Semiconductor]
|
| ME4103 ME4101 ME4102 |
NPN SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR
|
MICRO-ELECTRONICS[Micro Electronics]
|
| FZT1053 FZT1053A |
NPN Med Power Transistor
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| BC618 BC617 Q62702-C1138 Q62702-C1137 |
From old datasheet system
NPN Silicon Darlington Transistors (High current gain High collector current) 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| FZT1051A |
NPN Low Sat Transistor
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
SOT223 NPN SILICON PLANAR
|
Zetex Semiconductors
Diodes Incorporated
|
| FZT1047A |
NPN Low Sat Transistor
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
SOT223 NPN SILICON PLANAR
|
Zetex Semiconductors
Diodes Incorporated
|
| 2SC5606-A 2SC5606-T1-A 2SC56061 2SC5606 2SC5606-T1 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 路 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 隆陇 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
ST Microelectronics
NEC
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
